دیتاشیت GL1S12N06L-D8
مشخصات دیتاشیت
| نام دیتاشیت |
GL1S12N06L-D8
|
| حجم فایل |
73.75
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Type:
2 N-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
GL GL1S12N06L-D8
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
2W
-
Total Gate Charge (Qg@Vgs):
6.6nC@10V
-
Drain Source Voltage (Vdss):
60V
-
Input Capacitance (Ciss@Vds):
250pF@30V
-
Continuous Drain Current (Id):
12A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
20pF@30V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
58mΩ@10V,6A
-
Package:
SOIC-8
-
Manufacturer:
GL
