GL1S12N06L-D8 数据手册
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技术规格
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: GL GL1S12N06L-D8
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 2W
- Total Gate Charge (Qg@Vgs): 6.6nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 250pF@30V
- Continuous Drain Current (Id): 12A
- Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 20pF@30V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 58mΩ@10V,6A
- Package: SOIC-8
- Manufacturer: GL